smd type ic smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 features high dc current gain: 0.1ma to 500 ma. low collector-emitter saturation voltage. absolute maximum ratings ta = 25 parameter symbol BSS80 bss82 unit collector-emitter voltage v ceo 40 60 v collector-base voltage v cbo v emitter-base voltage v ebo v collector current i c ma peak collector current i cm a base current i b ma peak base current i bm ma total power dissipation,t s =77 p tot mw junction temperature t j storage temperature t stg junction - soldering point r thjs k/w 60 5 330 150 -65to+150 220 800 1 200 100 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type ic smd type transistors BSS80,bss82 smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123
smd type ic smd type transistors BSS80,bss82 h fe classification type rank b c marking chs cjs type rank b c marking cls cms BSS80 bss82 electrical characteristics ta = 25 symbol testconditons min typ max unit BSS80 40 bss82 60 collector-base breakdown voltage v (br)cbo i c =10a,i e =0 60 v v (br)ebo i e =10a,i c =0 5 v v cb =50v,i e = 0 10 na v cb =50v,i e =0,t a = 150 10 a i ebo v eb =3v,i c = 0 10 na BSS80/82b 40 BSS80/82c 75 BSS80/82b 40 BSS80/82c 100 BSS80/82b 40 BSS80/82c 100 BSS80/82b 40 120 BSS80/82c 100 300 BSS80/82b 40 BSS80/82c 50 i c = 150 ma, i b =15ma 0.4 i c = 500 ma, i b =50ma 1.6 i c = 150 ma, i b =15ma 1.3 i c = 500 ma, i b =50ma 2.6 f t i c =20ma,v ce = 20 v, f = 100 mhz 250 mhz ccb v cb =10v,f=1mhz 6 pf td v cc =30v,i c = 150 ma, i b1 =15ma,v be(off) =0.5v 10 ns tr v cc =30v,i c = 150 ma, i b1 =15ma,v be(off) =0.5v 40 ns tstg v cc =30v,i c = 150 ma, i b1 =i b2 = 15 ma, 80 ns tf v cc =30v,i c = 150 ma, i b1 =i b2 = 15 ma, 30 ns * pulse test: t 300s, d = 2%. i c = 100 a, v ce =10v i c =1ma,v ce =10v i c =10ma,v ce =10v dc current gain * h fe i c = 500 ma, v ce =10v rise time storage time fall time delay time emitter-base breakdown voltage i cbo collector cutoff current base-emitter saturation voltage * v be(sat) emitter cutoff current transition frequency collector-base capacitance i c = 150 ma, v ce =10v collector-emitter saturation voltage * v ce(sat) v v (br)ceo i c =10ma,i b =0 v parameter collector-emitter breakdown voltage sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123
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